Effect of random well-width fluctuations on the exciton optical absorption spectrum in single quantum wells

被引:5
|
作者
Sa-Yakanit, V [1 ]
Roussignol, P
Slavcheva, G
机构
[1] Chulalongkorn Univ, Fac Sci, Dept Phys, Forum Theoret Sci, Bangkok 10330, Thailand
[2] Ecole Normale Super, Phys Mat Condensee Lab, F-75231 Paris 05, France
[3] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 08期
关键词
D O I
10.1103/PhysRevB.62.5079
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical density function is calculated in a single quantum well for two-dimensional excitons moving in a random potential in the interfacial plane generated by fluctuations of the quantum-well thickness. Assuming Gaussian statistics far the random potential distribution, we have applied the path-integral approach and obtained in the adiabatic approximation two asymptotic analytical expressions for the low- and high-energy tails of the optical absorption spectrum. The high-energy tail of the exciton absorption line is also calculated using the perturbation theory. In order to obtain the spectrum across the whole energy range an analytical interpolation formula is found between the asymptotic expressions in the two cases, taking into account the proper normalization of the spectral function. The calculated optical density function is asymmetrically broadened, the magnitude of the peak is reduced, and the maximum is shifted to lower energy in both cases considered, as the disorder increases, in agreement with other theoretical results. Using the fitting parameters to the time-resolved photoluminescence data of Zimmermann [Nuovo Cimento D 17, 1801 (1995)], we find that the path-integral method leads to results for the spectral widths (full widths at half maximum) that are closer to those experimentally observable, as compared with results inferred from the perturbation theory approach. This can be attributed to the additional contribution of the localized exciton states from the Kane band tail in the former method. The effect of varying the correlation length (at a fixed depth of the random potential fluctuations) on the optical density function is also studied.
引用
收藏
页码:5079 / 5091
页数:13
相关论文
共 50 条
  • [1] Gross well-width fluctuations in InGaN quantum wells
    Oliver, R. A.
    Kappers, M. J.
    Humphreys, C. J.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1475 - +
  • [2] Well-width dependence of exciton-longitudinal-optical-phonon coupling in MgZnO/ZnO single quantum wells
    Sun, J. W.
    Zhang, B. P.
    [J]. NANOTECHNOLOGY, 2008, 19 (48)
  • [3] Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells
    Vehse, M
    Michler, P
    Gutowski, J
    Figge, S
    Hommel, D
    Selke, H
    Keller, S
    DenBaars, SP
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (05) : 406 - 412
  • [4] Effects of indium segregation and well-width fluctuations on optical properties of InGaN/GaN quantum wells
    Vala, AS
    Godfrey, MJ
    Dawson, P
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (02): : 453 - 456
  • [5] WELL-WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN GAAS/ALGAAS QUANTUM-WELLS
    JIN, SR
    XU, ZY
    LUO, JS
    LUO, CP
    XU, JZ
    ZHENG, BZ
    [J]. ACTA PHYSICA SINICA-OVERSEAS EDITION, 1994, 3 (05): : 384 - 389
  • [6] Exciton Molecules in Quantum Wells: Influence of the Well Width Fluctuations
    A. V. Filinov
    F. M. Peeters
    C. Riva
    Yu. E. Lozovik
    M. Bonitz
    [J]. Few-Body Systems, 2004, 34 : 149 - 154
  • [7] Exciton molecules in quantum wells: Influence of the well width fluctuations
    Filinov, AV
    Peeters, FM
    Riva, C
    Lozovik, YE
    Bonitz, M
    [J]. FEW-BODY SYSTEMS, 2004, 34 (1-3) : 149 - 154
  • [8] Well-width dependence of light-hole exciton dephasing in GaAs quantum wells
    Gopal, AV
    Vengurlekar, AS
    [J]. PHYSICAL REVIEW B, 2000, 62 (07): : 4624 - 4629
  • [9] Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
    Schulz, Stefan
    Caro, Miguel A.
    Coughlan, Conor
    O'Reilly, Eoin P.
    [J]. PHYSICAL REVIEW B, 2015, 91 (03)
  • [10] Well-width dependence of exciton-phonon scattering in InxGa1-xAs/GaAs single quantum wells
    Borri, P
    Langbein, W
    Hvam, JM
    Martelli, F
    [J]. PHYSICAL REVIEW B, 1999, 59 (03) : 2215 - 2222