ULTRA HIGH REPETITION RATE AND VERY LOW NOISE MODE LOCKED LASERS BASED ON INAS/INP QUANTUM DASH ACTIVE MATERIAL

被引：1
|
作者：
Akrout, A. [1 ]
Merghem, K. [1 ]
Martinez, A. [1 ]
Tourrenc, J-P. [1 ]
Lafosse, X. [1 ]
Aubin, G. [1 ]
Ramdane, A. [1 ]
Lelarge, F. [2 ]
Le Gouezigou, O. [2 ]
Accard, A. [2 ]
Duan, G-H. [2 ]
机构：
[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[2] Alcatel Thales III V Lab, F-91460 Marcoussis, France
来源：
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年
关键词：
1.55; MU-M; ROOM-TEMPERATURE; DOT LASERS; JITTER;
D O I：
10.1109/ICIPRM.2009.5012411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optimization of novel InAs/InP quantum dash nanostructures has allowed the realization of mode locked lasers that exhibit unprecedented performance, enabling subpicosecond pulse generation at >300 GHz repetition rates and very low timing jitter.
引用
收藏
页码：45 / 47
页数：3
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