Order-disorder phase transition in Zn1-xMnxGa2Se4:: Long-range order parameter versus x -: art. no. 125208

被引:10
|
作者
Morón, MC
Hull, S
机构
[1] Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
[2] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England
关键词
D O I
10.1103/PhysRevB.67.125208
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The opportunity of the Zn1-xMnxGa2Se4 (0less than or equal toxless than or equal to1) series for exploring the possibilities of ordering-disordering processes as a function of x is shown. A pumping of Mn ions from one particular site of the crystal lattice to another occurs in this system on addition of Zn. As a consequence, the tetragonal diluted magnetic semiconductor Zn1-xMnxGa2Se4 series exhibits an order-disorder phase transition at x(c)=0.50+/-.01 with (c/a)(c)=1.964+/-.005. The disordering process is accompanied by an abrupt change in the tetragonal unit cell parameters c and 2-(c/a), a modification of the crystal lattice from defective chalcopyrite to defective stannite and a crossover from space group I-4 to I-42 m. The order-disorder phase transition has been quantified through the direct determination of a long-range order parameter eta within its whole range of existence (0less than or equal toetaless than or equal to1).
引用
收藏
页数:7
相关论文
共 50 条
  • [1] A raman study of order-disorder phenomena in Zn1-xMnxGa2Se4Compounds
    Alonso-Gutierrez, P.
    Sanjuan, M. L.
    Moron, M. C.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 185 - +
  • [2] Effect of magnetic dilution in Zn1-xMnxGa2Se4 (O<x<0.5) -: art. no. 013904
    Morón, MC
    Hull, S
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)
  • [3] Order/disorder phenomena in Zn1-xMnxGa2Se4 ordered vacancy compounds: high temperature neutron powder diffraction experiments
    Alonso-Gutierrez, P.
    Moron, M. C.
    Hull, S.
    Sanjuan, M. L.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 25 (48)
  • [4] Anisotropic order-disorder vortex transition in La2-xSrxCuO4 -: art. no. 214525
    Radzyner, Y
    Shaulov, A
    Yeshurun, Y
    Felner, I
    Kishio, K
    Shimoyama, J
    PHYSICAL REVIEW B, 2002, 65 (21)
  • [5] Order-disorder mechanism of the I-II phase transition in CsZnPO4 -: art. no. 014104
    Yamashita, I
    Kawaji, H
    Atake, T
    Kuroiwa, Y
    Sawada, A
    PHYSICAL REVIEW B, 2003, 67 (01)
  • [6] Molecular dynamics simulation of the order-disorder phase transition in solid NaNO2 -: art. no. 174106
    Yin, WG
    Duan, CG
    Mei, WN
    Liu, JJ
    Smith, RW
    Hardy, JR
    PHYSICAL REVIEW B, 2003, 68 (17)
  • [7] Order-disorder phase transition in NbSe2:: Absence of amorphous vortex matter -: art. no. 020512
    Fasano, Y
    Menghini, M
    de la Cruz, F
    Paltiel, Y
    Myasoedov, Y
    Zeldov, E
    Higgins, MJ
    Bhattacharya, S
    PHYSICAL REVIEW B, 2002, 66 (02):
  • [8] Unified order-disorder vortex phase transition in high-Tc superconductors -: art. no. 100513
    Radzyner, Y
    Shaulov, A
    Yeshurun, Y
    PHYSICAL REVIEW B, 2002, 65 (10) : 1 - 4
  • [9] Order-disorder transition in the surface charge-density-wave phase of Cu(001)-c(4x4)-In -: art. no. 081406
    Hatta, S
    Okuyama, H
    Aruga, T
    Sakata, O
    PHYSICAL REVIEW B, 2005, 72 (08)
  • [10] Influence of growth direction on order-disorder transition in (GaAs)1-x(Si2)x alloys -: art. no. 033308
    Rodriguez, AG
    Navarro-Contreras, H
    Vidal, MA
    PHYSICAL REVIEW B, 2002, 65 (03) : 1 - 4