Epitaxial GaNxAs1-x layer formed by pulsed-laser irradiation of GaAs in an ambient nitrogen gas

被引：2
|
作者：
Hung, WK [1 ]
Chern, MY [1 ]
Chen, YF [1 ]
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 09期
关键词：
D O I：
10.1088/0268-1242/15/9/303
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a novel method to synthesize GaNxAs1-x epitaxial films. The (001) GaAs substrates were irradiated by a pulsed laser in a nitrogen atmosphere at room temperature. High-resolution x-ray diffraction indicates the formation of an epitaxial GaNxAs1-x layer on the substrate. The effects of the ambient pressure and the laser parameters (fluence, repetition rate and number of shots) on the incorporated N content x and film quality are studied. A threshold laser fluence must be achieved in order that N can be incorporated. The maximum extent of x obtained is about 1%.
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页码：892 / 894
页数：3
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