Evaluation of high frequency characteristics of ALIVH substrate for 60 GRz RF modules

被引：0
|
作者：
Nakase, Hiroyuki [1 ]
Fujii, Takashi [1 ]
Oshima, Shoichi [1 ]
Oguma, Hiroshi
Kameda, Suguru
Isota, Yoji
Tsubouchi, Kazuo
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan
来源：
EPTC 2006: 8TH ELECTRONIC PACKAGING TECHNOLOGY CONFERENCE, VOLS 1 AND 2 | 2006年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High frequency characteristics of any layer interstitial via hole (ALIVH) substrate have been evaluated for an application to the RF modules on 60GHz. A dielectric constant and loss tangent up to 60GHz was measured using strip line resonator designed on the ALIVH substrate. Measured dielectric constant 3.85-3.47 and loss tangent of 0.032-0.043 were almost constant from 2.5GHz to 60GHz. Equivalent lumped component circuit of via hole was modeled from measurement of frequency of strip line resonator with via hole. T-type LC circuit was employed for the circuit. The evaluated inductance was 0.090-0.128 nH and capacitance was 0.129-0.195 pF. It was confirmed that the high frequency characteristics of ALIVH were sufficient for the application to RF module and 3-D SiP with no critical degradation.
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页码：639 / 642
页数：4
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