Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal-organic vapor phase epitaxy

AIGaN-based deep ultraviolet light-emitting diodes (LEDs) have a wide range of applications such as medical diagnostics, gas sensing, and water sterilization. Metal-organic vapor phase epitaxy (MOVPE) method is used for the growth of all-in-one structures, including doped layer and thin multilayers, using metal-organic and gas source raw materials for semiconductor devices. For AlN growth with high crystalline quality, high temperature is necessary to promote the surface migration of Al atoms and Al-free radicals. However, increase in temperature generates parasitic gas-phase prereactions such as adduct formation. In this work, AIN growth at 1500 degrees C by a stable vapor phase reaction has been achieved by jet stream gas flow metal-organic vapor phase epitaxy. The AlN growth rate increases with gas flow velocity and saturates at similar to 10 m/s at room temperature. Moreover, it is constant at an ammonia flow rate at a V/III ratio from 50 to 220. These results demonstrate the reduction in adduct formation, which is a typical issue with the vapor phase reaction between triethylaluminum and ammonia. The developed method provides the in-plane uniformity of AlN thickness within 5%, a low concentration of unintentionally doped impurities, smooth surface, and decrease in dislocation density because of the suppression of parasitic reactions.