Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality

被引：5

作者：

Nadtochiy, A. M. ^{[1
]}

Mintairov, S. A. ^{[2
]}

Kalyuzhnyy, N. A. ^{[2
]}

Maximov, M., V ^{[1
]}

Sannikov, D. A. ^{[3
,4
]}

Yagafarov, T. F. ^{[3
]}

Zhukov, A. E. ^{[1
]}

机构：

[1] St Petersburg Natl Res Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia

[2] Ioffe Inst, St Petersburg 194021, Russia

[3] Skolkovo Inst Sci & Technol, Moscow 121205, Russia

[4] Russian Acad Sci, Lebedev Phys Inst, Moscow 119333, Russia

来源：

SEMICONDUCTORS | 2019年 / 53卷 / 11期

基金：

俄罗斯科学基金会;

关键词：

photoluminescence; time resolution; quantum-confined structures; DOTS;

D O I：

10.1134/S1063782619110150

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time of the samples substantially depends on their dimensionality and corresponds to 6, 7, and >20 ns for quantum dots, well-dots, and wells, respectively. It is thought that the presence of localization centers for charge carriers can be responsible for the experimentally observed shortening of the photoluminescence time in the heterostructures.

引用

页码：1489 / 1495

页数：7

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