Hot-electron velocity fluctuations in two-dimensional electron gas channels

被引：9
|
作者：
Matulionis, A [1 ]
Aninkevicius, V [1 ]
Liberis, J [1 ]
机构：
[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
来源：
MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 11期
关键词：
D O I：
10.1016/S0026-2714(00)00081-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A review of experimental results on the hot-electron fluctuations specific to a two-dimensional electron gas confined in a heterostructure channel is given. The main attention is paid to AlGaAs/GaAs and InP-based InGaAs channels subjected to a high electric field applied along the ungated channel. The microwave electronic noise caused by the hot-electron fluctuations is analyzed in terms of fast and ultrafast kinetic processes. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1803 / 1814
页数：12
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