Anodization-based area reduction process of Nb/Al-AlOx/Nb Josephson junctions

被引：0
|
作者：
Andreone, D [1 ]
Lacquaniti, V
Maggi, S
Monticone, E
Steni, R
机构：
[1] Ist Elettrotecn Nazl Galileo Ferraris, Time & Frequency Dept, Turin, Italy
[2] Ist Elettrotecn Nazl Galileo Ferraris, Thin Film Dept, Turin, Italy
来源：
APPLIED SUPERCONDUCTIVITY 1997, VOLS 1 AND 2: VOL 1: SMALL SCALE AND ELECTRONIC APPLICATIONS; VOL 2: LARGE SCALE AND POWER APPLICATIONS | 1997年 / 158期
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A fabrication process where controlled anodization is used to reduce the area of Nb/Al-AlOx/Nb Josephson tunnel junctions is presented. This process could be used to fabricate reproducible high-quality submicrometer junctions using photoresist masking pads of several square micrometer. For junctions with an area of 10x10 mu m(2), an edge reduction between 0.5 mu m and 1.75 mu m has been obtained, with a fine dependence on the anodization parameters.
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页码：535 / 538
页数：4
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