Physico-chemical properties and electrophysical characteristics of niobium nitride gallium arsenide heterostructures

被引：0
|
作者：
Belyaev, AA [1 ]
Hotovy, I [1 ]
Kashin, GN [1 ]
Konakova, RV [1 ]
Lyapin, VG [1 ]
Milenin, VV [1 ]
Tkhorik, YA [1 ]
Venger, EF [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252650 Kiev 28, Ukraine
来源：
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2 | 1997年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For niobium nitride - gallium arsenide heterostructures the effect of interaction between phases on the contact electrophysical characteristics was studied It was found that-the characteristics depended nonmonotonically on both nitrogen percentage in the working gas mixture and annealing temperature This may be related to compositional and structural nonuniformities of the interface.
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页码：207 / 210
页数：4
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