Annealing temperature dependence of terahertz wave detection by low-temperature-grown-GaAs-based photoconductive antennas gated by 1560 nm optical pulses

被引：0

作者：

Suzuki, M. ^{[1
]}

Tonouchi, M. ^{[1
]}

Kamakura, M. ^{[2
]}

Kadoya, Y.

Yoshimura, M. ^{[3
]}

Takagi, M. ^{[3
]}

Takahashi, Y. ^{[3
]}

Onduka, S. ^{[3
]}

Brahadeeswaran, S. ^{[3
]}

Mori, Y. ^{[3
]}

Sasaki, T. ^{[3
]}

机构：

[1] Osaka Univ, Inst Laser Engn, Suita, Osaka 565, Japan

[2] Hiroshima Univ, Grad Sch Adv Sci Matter, Hiroshima 7398530, Japan

[3] Osaka Univ, Grad Sch Engn, Osaka 5650871, Japan

来源：

CONFERENCE DIGEST OF THE 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied THz detection performance of low-temperature-grown GaAs (LT-GaAs) photoconductive switches gated with 1560-nm-optical pulses. LT-GaAs is annealed in the range of 500-600 degrees C. Although the sample annealed at 600 degrees C is most sensitive at frequencies below 1 THz, that annealed at 550 degrees C is superior to others at higher frequencies than 1 THz.

引用

页码：429 / 429

页数：1

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