Electrical and light-emitting properties of (001)-oriented homoepitaxial diamond p-i-n junction

被引：13

作者：

Makino, Toshiharu

Tokuda, Norio

Kato, Hiromitsu

Ogura, Masahiko

Watanabe, Hideyuki

Ri, Sung-Gi

Yarnasaki, Satoshi

Okushi, Hideyo

机构：

[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[2] AIST, Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan

来源：

关键词：

diamond film; electrical properties; optical properties; light emission;

D O I：

10.1016/j.diamond.2007.01.024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have realized high-efficiency excitonic emission with deep-UV light at room temperature for a (001)-oriented diamond p-i-n junction diode consisting of the boron-doped p-type, non-doped intrinsic, and phosphorus-doped n-type layers. High-performance p-i-n junction characteristics were confirmed from current-voltage and capacitance-voltage properties. A strong UV light emission at around 240 nm due to free exciton recombination was observed at a forward current, while the broad visible light emission from deep levels was significantly suppressed compared to that of reported electroluminescence in diamond p-n junctions. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1025 / 1028

页数：4

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