The effect of an InP cap layer on the photoluminescence of an InxGa1-xAs1-yPy/InzAl1-zAs quantum well heterostructure

被引：11
|
作者：
Esmaielpour, Hamidreza [1 ]
Whiteside, Vincent R. [1 ]
Hirst, Louise C. [2 ]
Tischler, Joseph G. [2 ]
Walters, Robert J. [2 ]
Sellers, Ian R. [1 ]
机构：
[1] Univ Oklahoma, Homer L Dodge Dept Phys & Astron, 440 W Brooks St, Norman, OK 73019 USA
[2] US Naval Res Lab, 4555 Overlook Ave SW, Washington, DC 20375 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2017年 / 121卷 / 23期
基金：
美国国家科学基金会;
关键词：
1.55; MU-M; TEMPERATURE-DEPENDENCE; SOLAR-CELLS; INTERFACE; INGAASP;
D O I：
10.1063/1.4985614
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of an InP cap on the photoluminescence (PL) spectrum of an InGaAsP/InAlAs quantum well (QW) is investigated using excitation power and temperature dependent PL. An as-grown sample with the InP cap layer shows an inverted interface created between InP and InAlAs that has a transition energy very close to the transition energy of the QW; consequently, there is an overlap between them. On the other hand, the QW sample with the cap layer etched away does not have a feature due to the inverted interface; even at very low power, the only observed feature is due to the QW transition. Published by AIP Publishing.
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页数：6
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