Soft X-rays for deep sub-100 nm lithography, with and without masks

被引:0
|
作者
Smith, HI [1 ]
Carter, DJD [1 ]
Ferrera, J [1 ]
Gil, D [1 ]
Goodberlet, J [1 ]
Hastings, JT [1 ]
Lim, MH [1 ]
Meinhold, M [1 ]
Menon, R [1 ]
Moon, EE [1 ]
Ross, CA [1 ]
Savas, T [1 ]
Walsh, M [1 ]
Zhang, F [1 ]
机构
[1] MIT, Elect Res Lab, Nanostruct Lab, Cambridge, MA 02139 USA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The development of micro- and nanofabrication, their applications, and their dependent industries has progressed to a point where a bifurcation of technology development will likely occur. On the one hand, the semiconductor industry (at least in the USA) has decided to develop EUV and SCALPEL to meet its future needs. Even if the semiconductor industry is successful in this (which is by no means certain) such tools will not be useful in most other segments of industry and research that will employ nanolithography. As examples, MEMS, integrated optics, biological research, magnetic information storage, quantum-effect research, and multiple applications not yet envisioned will not employ the lithography tools of the semiconductor industry, either because they are too expensive, insufficiently flexible, or lacking in accuracy and spatial-phase coherence. Of course, direct-write electron-beam lithography can meet many of these non-semiconductor-industry needs, but in other cases a technique of higher throughput or broader process-latitude is necessary. Our experience at MIT in applying low-cost proximity x-ray nanolithography to a wide variety of applications leads us to conclude that this technology can provide an alternative path of a bifurcation. A new projection lithography technique, zone-plate-array lithography (ZPAL), does not require a mask, can operate from UV to EW to x-rays, and has the potential to reach the limits of the lithographic process.
引用
收藏
页码:11 / 21
页数:11
相关论文
共 50 条
  • [1] Soft x-rays for deep sub-100 nm lithography, with and without masks
    Smith, HI
    Carter, DJD
    Meinhold, M
    Moon, EE
    Lim, MH
    Ferrera, J
    Walsh, M
    Gil, D
    Menon, R
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 77 - 84
  • [2] Sub-100 nm soft lithography for optoelectronics applications
    Meneou, K.
    Cheng, K. Y.
    2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 331 - 332
  • [3] Sub-100 nm imaging in X-ray lithography
    Vladimirsky, O
    Dandekar, N
    Jiang, W
    Leonard, Q
    Simon, K
    Bollepalli, S
    Vladimirsky, Y
    Taylor, JW
    EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 : 478 - 484
  • [4] Transfer printing of sub-100 nm nanoparticles by soft lithography with solvent mediation
    Cerf, Aline
    Vieu, Christophe
    COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2009, 342 (1-3) : 136 - 140
  • [5] Sub-100 nm structures by neutral atom lithography
    Schulze, T
    Brezger, B
    Schmidt, PO
    Mertens, R
    Bell, AS
    Pfau, T
    Mlynek, J
    MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) : 105 - 108
  • [6] Sub-100 nm structures by neutral atom lithography
    Schulze, Th.
    Brezger, B.
    Schmidt, P.O.
    Mertens, R.
    Bell, A.S.
    Pfau, T.
    Mlynek, J.
    Microelectronic Engineering, 1999, 46 (01): : 105 - 108
  • [7] Next generation 193 nm laser for sub-100 nm lithography
    Duffey, T
    Blumenstock, GM
    Fleurov, V
    Pan, XJ
    Newman, P
    Glatzel, H
    Watson, T
    Erxmeyer, J
    Kuschnereit, R
    Weigl, B
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 1202 - 1209
  • [8] Deep sub-100 nm design challenges
    Furuyama, Tohru
    DSD 2006: 9TH EUROMICRO CONFERENCE ON DIGITAL SYSTEM DESIGN: ARCHITECTURES, METHODS AND TOOLS, PROCEEDINGS, 2006, : 9 - 16
  • [9] Deep sub-100 nm design challenges
    Furuyama, T.
    ISQED 2006: Proceedings of the 7th International Symposium on Quality Electronic Design, 2006, : 13 - 13
  • [10] Sub-100 nm Patterning of supported bilayers by nanoshaving lithography
    Shi, Jinjun
    Chen, Jixin
    Cremer, Paul S.
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (09) : 2718 - +