Fabrication of Cu(In, Ga)Se2 thin film solar cell absorbers from electrodeposited bilayers

CuInSe2 (CIS) and Cu(In, Ga)Se-2 (CIGS) films as solar cell absorbers have been fabricated from electrodeposited (ED) In-Se/CIS and CIS/CuGaSe2 (CGS) bilayers, respectively Firstly, In-Se/CIS bilayers were intermixed by annealing at 600 degrees C for 10 min and it followed that OS films with large grains and controlled compositional ratios were realized CIS solar cells using these films showed around 2 2% efficiency Next. CIS/CGS bilayers were annealed at 600 degrees C for 60 min for intermixing Here, oxygen-free CGS films prepared from Cu-Ga-Se solution added Li2SO4 as the supporting electrolyte were used because Ga-O compound formed in ED-CGS films worked as the defects As the results. around 2 9% efficiency CIGS solar cell using the films was realized Especially. 29 7 mA/cm(2) and 36 1 mA/cm(2) high short-circuit current density were obtained in the CIS and CIGS solar cells, respectively These Jesuits indicate that ED-bilayers technique is useful to realize low-cost and high efficiency solar cell (C) 2009 Elsevier B V All rights reserved