High fluence proton irradiation of GaAs detectors at room temperature and at -8°C

被引：0

作者：

Xiao, WJ ^{[1
]}

Albertz, D ^{[1
]}

Braunschweig, W ^{[1
]}

Chu, Z ^{[1
]}

Karpinski, W ^{[1
]}

Krais, R ^{[1
]}

Kubicki, T ^{[1
]}

Lubelsmeyer, K ^{[1
]}

Rente, C ^{[1
]}

Syben, O ^{[1
]}

Tenbusch, F ^{[1
]}

Toporowski, T ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 1, D-5100 Aachen, Germany

来源：

NUCLEAR PHYSICS B | 1998年

关键词：

D O I：

暂无

中图分类号：

O412 [相对论、场论]; O572.2 [粒子物理学];

学科分类号：

摘要：

Semi-insulating GaAs detectors processed in Aachen using Freiberger Compound Material with low carbon content (FCM-LC) have been irradiated with protons (23 GeV) at eleven different fluences up to 6.3 x 10(14) p/cm(2) at room temperature. The detectors have been characterized in terms of macroscopic quantities like I-V characteristic curves and the signal response for incident minimum ionizing particles before and after irradiation. At the temperature of -8 degrees C three other GaAs detectors have been irradiated with protons at fluences of about 6 x 10(13) p/cm(2). After the irradiation they are warmed up at room temperature. The behaviour of the detectors before and after the warming up period has been studied.

引用

页码：427 / 431

页数：5

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