Electrical properties of Sc Schottky barrier diodes fabricated on argon-ion sputtered p-GaAs

被引：3
|
作者：
Goodman, SA [1 ]
Auret, FD [1 ]
Deenapanray, PNK [1 ]
Myburg, G [1 ]
机构：
[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 1AB期
关键词：
p-GaAs; Schottky; current-voltage; sputter;
D O I：
10.1143/JJAP.37.L10
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxially grown p-GaAs wafers were bombarded with Ar-ions before the deposition of scandium (Sc) on them. Current-voltage (I-V) measurements of these Schottky barrier diodes showed that the barrier height, series resistance and ideality factor were increased as the Ar-ion fluence was increased.
引用
收藏
页码：L10 / L12
页数：3
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