Over 27% efficiency GaAs/InGaAs mechanically stacked solar cell

被引：13

作者：

Matsubara, H

Tanabe, T

Moto, A

Mine, Y

Takagishi, S

机构：

[1] Sumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 664, Japan

[2] Sumitomo Elect Ind Ltd, Syst & Elect R&D Ctr, Itami, Hyogo 664, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 50卷 / 1-4期

关键词：

GaAs/InGaAs; solar cells; efficiency;

D O I：

10.1016/S0927-0248(97)00142-6

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have applied an InGaAs solar cell (band gap = 0.75 eV) to the bottom cell of the super-high-efficiency tandem solar cell aiming an over 35% conversion efficiency. The InGaAs cell which is lattice-matched to the InP substrate showed the efficiency of 5.5% under the GaAs substrate with low carrier concentration. Combining with the GaAs cell by means of a mechanically stacking technique, we obtained an efficiency of 28.8% at air mass (AM) 1.5, 1-sun. This result suggests the possibility of the cells with the efficiency of over 35% with combining a GaInP/GaAs monolithic tandem cell and the InGaAs cell (or InGaAsP cell).

引用

页码：177 / 184

页数：8

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