Form birefringence in porous semiconductors and dielectrics: A review

被引：29
|
作者：
Golovan, L. A. [1 ]
Kashkarov, P. K. [1 ]
Timoshenko, V. Yu. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119992, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2007年 / 52卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063774507040153
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The phenomenon of optical anisotropy in porous semiconductors and dielectrics (porous silicon, gallium phosphide, and alumina) and photonic crystal structures formed on their basis is reviewed. It is shown that anisotropic nanostructuring of initially isotropic media leads to the occurrence of strong birefringence. Applicability of the effective-medium model to description of the form birefringence in porous semiconductors and dielectrics is discussed.
引用
收藏
页码：672 / 685
页数：14
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