Synthesis and characterization of porous silsesquioxane dielectric films

被引：10
|
作者：
Yu, SZ
Wong, TKS
Hu, X
Pita, K
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Mat Engn, Singapore 639798, Singapore
来源：
THIN SOLID FILMS | 2005年 / 473卷 / 02期
关键词：
silsesquioxane; low dielectric constant; nanoscale materials; synthesis and characterization; porous materials;
D O I：
10.1016/j.tsf.2004.03.040
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The silsesquioxane (SSQ) films with low dielectric constant have been successfully synthesized by covalently binding a thermally decomposable porogen [poly(amidoamine), PAMAM] to a host polymer (hydrogen methyl silsesquioxane, HMSQ) via a coupling agent. The decomposition behavior of the porogen as well as the thermal and dielectric properties of the host polymer heat-treated in different atmospheres have been studied and compared. The dielectric properties of the HMSQ-PAMAM porous films have been investigated as a function of porogen concentration. An average dielectric constant about 2.06 could be obtained with leakage current density on the order of 10(-7) A/cm(2) for a film with 20-wt.% loading of the PAMAM polymer. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：191 / 195
页数：5
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