Thermal conductivity of SiC after heavy ions irradiation

被引：27

作者：

Cabrero, J. ^{[1
,2
]}

Audubert, F. ^{[2
]}

Pailler, R. ^{[1
]}

Kusiak, A. ^{[3
]}

Battaglia, J. L. ^{[3
]}

Weisbecker, P. ^{[1
]}

机构：

[1] Univ Bordeaux, LCTS, F-33600 Pessac, France

[2] CEA, DEN, DEC, SPUA, F-13108 St Paul Les Durance, France

[3] Univ Bordeaux, Lab Transferts Ecoulements Fluides Energet, F-33405 Talence, France

来源：

JOURNAL OF NUCLEAR MATERIALS | 2010年 / 396卷 / 2-3期

关键词：

SILICON-CARBIDE; THIN DEPOSIT; DISPLACEMENT; IMPLANTATION; AMORPHIZATION; TEMPERATURE; RADIATION; CERAMICS; BEHAVIOR; DAMAGE;

D O I：

10.1016/j.jnucmat.2009.11.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we performed irradiation experiments on alpha-SiC samples, with heavy ions at room temperature (74 MeV Kr, fluence of 5 x 10(14) ions cm(-2)). This energy results in an irradiated layer of about 9.6 mu m for SiC. TEM and Raman analyses reveal a graded damaged material. In the electronic interactions domain SiC is weakly damaged whereas it becomes fully amorphous in the nuclear interactions domain. According to the structural examinations, the irradiated SiC is considered as a multilayered material. Thermal conductivity in both electronic and nuclear interactions domains is measured as a function of temperature and annealing temperature. It appears that such an approach is reliable to estimate thermal conductivity of ceramics under neutron irradiation. (C) 2009 Published by Elsevier B.V.

引用

页码：202 / 207

页数：6

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