High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS

被引：9
|
作者：
Kimura, K [1 ]
Oota, Y
Nakajima, K
Büyüklimanli, TH
机构：
[1] Kyoto Univ, Dept Engn Phys & Mech, Kyoto 6068501, Japan
[2] Evans E, E Windsor, NJ 08520 USA
来源：
CURRENT APPLIED PHYSICS | 2003年 / 3卷 / 01期
关键词：
RBS; high-resolution; ultrashallow implantation; boron profiling;
D O I：
10.1016/S1567-1739(02)00227-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Depth profiles of ultralow energy (0.2-0.5 keV) B ion implants in Si(0 0 1) samples are measured by high-resolution Rutherford backscattering spectroscopy. The boron profile does not show a narrow surface concentration peak which is usually observed in the measurement of secondary ion mass spectroscopy. The obtained boron profiles roughly agree with TRIM simulation even at 0.2-keV B ion implantation. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：9 / 11
页数：3
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