Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics

被引：28
|
作者：
Khankhoje, U. K. [1 ]
Kim, S-H [1 ]
Richards, B. C. [2 ]
Hendrickson, J. [2 ]
Sweet, J. [2 ]
Olitzky, J. D. [2 ]
Khitrova, G. [2 ]
Gibbs, H. M. [2 ]
Scherer, A. [1 ]
机构：
[1] CALTECH, Pasadena, CA 91125 USA
[2] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA
来源：
NANOTECHNOLOGY | 2010年 / 21卷 / 06期
基金：
美国国家科学基金会;
关键词：
SLAB; NANOCAVITY; DOMAIN; MODES;
D O I：
10.1088/0957-4484/21/6/065202
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide ( GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide ( InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor ( Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.
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收藏
页数：7
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