Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth

被引：7
|
作者：
Pristovsek, M [1 ]
Menhal, H [1 ]
Zettler, JT [1 ]
Richter, W [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期
关键词：
MOVPE; gallium diffusion; step-bunching; high index surfaces; activation energy;
D O I：
10.1016/S0169-4332(00)00463-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have measured the valley spacing on the GaAs (113) surface using ex-situ atomic force microscopy (AFM). From samples grown at different temperatures and partial pressures, the diffusion length, activation energies for diffusion and diffusion constants were derived. The results were correlated to in-situ reflectance anisotropy spectroscopy (RAS) spectra. On GaAs (113), mainly, an (8 x 1) reconstruction is found with an EDiff = (0.38 +/- 0.06) eV. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：433 / 436
页数：4
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