Chemically deposited Sb2S3 thin films for optical recording

被引:33
|
作者
Shaji, S. [1 ,2 ]
Arato, A. [1 ,2 ]
O'Brien, J. J. [3 ,4 ]
Liu, J. [3 ,4 ]
Alan Castillo, G. [1 ]
Mendivil Palma, M. I. [1 ]
Das Roy, T. K. [1 ]
Krishnan, B. [1 ,2 ]
机构
[1] Univ Autonoma Nuevo Leon, Fac Ingn Mecan & Elect, San Nicolas De Los Garza 66450, Nuevo Leon, Mexico
[2] Univ Autonoma Nuevo Leon, CIIDIT, Apodaca, Nuevo Leon, Mexico
[3] Univ Missouri, Ctr Nanosci, St Louis, MO 63121 USA
[4] Univ Missouri, Dept Chem & Biochem, St Louis, MO 63121 USA
关键词
LASER-INDUCED CRYSTALLIZATION; SOLAR-CELLS; IRRADIATION; BEAM;
D O I
10.1088/0022-3727/43/7/075404
中图分类号
O59 [应用物理学];
学科分类号
摘要
Laser induced changes in the properties of Sb2S3 thin films prepared by chemical bath deposition are described in this paper. Sb2S3 thin films of thickness 550 nm were deposited from a solution containing SbCl3 and Na2S2O3 at 27 degrees C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.
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页数:7
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