Enhanced Ferroelectric and Piezoelectric Properties in Graphene-Electroded Pb(Zr,Ti)O3 Thin Films

被引:7
|
作者
Fan, Hua [1 ,2 ,3 ]
Tan, Zhengwei [4 ,5 ]
Liu, Haoyang [2 ,3 ]
Zhang, Luyong [4 ,5 ]
Zhang, Fengyuan [6 ,7 ]
Du, Wanshun [2 ,3 ]
Fan, Zhen [4 ,5 ]
Gao, Xingsen [4 ,5 ]
Pan, Feng [1 ]
Yu, Dapeng [2 ,3 ]
Zhao, Yue [2 ,3 ]
机构
[1] Peking Univ, Sch Adv Mat, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[2] Southern Univ Sci & Technol China, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
[3] Southern Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
[4] South China Normal Univ, South China Acad Adv Optoelect, Inst Adv Mat, Guangzhou 510006, Peoples R China
[5] South China Normal Univ, Guangdong Prov Key Lab Opt Informat Mat & Technol, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China
[6] Univ Coll Dublin, Sch Phys, Dublin 4, Ireland
[7] Southern Univ Sci & Technol, Acad Adv Interdisciplinary Studies, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
Ferroelectric; Pb(Zr; Ti)O-3; Graphene; 2D materials; Interface; NEGATIVE-CAPACITANCE; ELECTRORESISTANCE; FATIGUE;
D O I
10.1021/acsami.2c02277
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
While using ferroelectric polarization to tune the functional properties of 2D materials has been extensively studied recently, the effects of 2D materials on the ferroelectricity and piezoelectricity of ferroelectrics are much less explored. In this work, we report markedly enhanced ferroelectric and piezoelectric properties of graphene/Pb(Zr0.52Ti0.48)O-3/SrRuO3 (GR/PZT/SRO) capacitors. Compared with conventional metal-electroded ferroelectric capacitors, the GR/PZT/SRO capacitors exhibit more abrupt polarization switching, larger switchable polarization, lower leakage current, and smaller coercive voltage. Moreover, with graphene electrodes, the ferroelectric properties of PZT capacitors are much more stable against aging. The enhanced ferroelectric behaviors in GR/PZT/SRO capacitors can be attributed to an improved interface with fewer defects and inhibited growth of defective interfacial layer resulting from the graphene protection. Because of the atomic thickness and extraordinary mechanical flexibility of graphene, the piezoelectric response in PZT with graphene electrode is about four times larger than the one with an Au electrode. Our findings on the enhanced ferroelectric and piezoelectric properties of PZT with 2D electrodes advance the understanding of the 2D/PZT interface and provide solutions for developing high-performance ferroelectrics devices.
引用
收藏
页码:17987 / 17994
页数:8
相关论文
共 50 条
  • [1] Ferroelectric and piezoelectric properties of Pb(Zr,Ti)O3 thin films integrated on SOI wafers
    Wang, Y
    Cheng, YL
    Liu, WL
    Lam, TY
    Song, ZT
    Feng, SL
    Chan, HLW
    Choy, CL
    INTEGRATED FERROELECTRICS, 2005, 69 : 223 - 229
  • [2] Piezoelectric and dielectric properties of Pb(Zr,Ti)O3 ferroelectric bilayers
    Grigoriev, Alexei
    Yang, Chun
    Azad, Mandana Meisami
    Causey, Oliver
    Walko, Donald A.
    Tinberg, Daniel S.
    Trolier-McKinstry, Susan
    PHYSICAL REVIEW B, 2015, 91 (10):
  • [3] Ferroelectric properties of Pb(Zr,Ti)O3 thin films until 40 GHz
    Defay, E.
    Lacrevaz, T.
    Vo, T. T.
    Sbrugnera, V.
    Bermond, C.
    Aid, M.
    Flechet, B.
    APPLIED PHYSICS LETTERS, 2009, 94 (05)
  • [4] Microscopic polarization retention properties of ferroelectric Pb(Zr,Ti)O3 thin films
    Song, Tae Kwon
    Yoon, Jong-Gul
    Kwun, Sook-Il
    FERROELECTRICS, 2006, 335 : 61 - 68
  • [5] Measurement and Modeling of Dielectric Properties of Pb(Zr,Ti)O3 Ferroelectric Thin Films
    Renoud, Raphael
    Borderon, Caroline
    Gundel, Hartmut W.
    IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2011, 58 (09) : 1975 - 1980
  • [6] Ferroelectric properties of Pb(Zr,Ti)O3 heterolayered thin films for FRAM applications
    Kim, KT
    Kim, CI
    Lee, SG
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 662 - 669
  • [7] Sputtered Pb(Zr, Ti)O3 thin films for ferroelectric capacitors
    Sakoda, T
    Aoki, K
    Fukuda, Y
    FERROELECTRIC THIN FILMS VIII, 2000, 596 : 277 - 282
  • [8] Piezoelectric coefficients of multilayer Pb(Zr,Ti)O3 thin films
    Muensit, S.
    Sukwisut, P.
    Khaenamkeaw, P.
    Lang, S. B.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 92 (03): : 659 - 663
  • [9] Piezoelectric coefficients of multilayer Pb(Zr,Ti)O3 thin films
    S. Muensit
    P. Sukwisut
    P. Khaenamkeaw
    S. B. Lang
    Applied Physics A, 2008, 92 : 659 - 663
  • [10] Dielectric, ferroelectric, piezoelectric properties of highly oriented Pb(Zr0.3Ti0.7)O3 thin films
    Fu, DS
    Yoshimi, Y
    Suzuki, H
    Ishikawa, K
    ASIAN CERAMIC SCIENCE FOR ELECTRONICS II AND ELECTROCERAMICS IN JAPAN V, PROCEEDINGS, 2002, 228-2 : 63 - 67