Electron beam induced modifications of bismuth sulphide (Bi2S3) thin films: Structural and optical properties

被引：14

作者：

Subramanian, S. ^{[2
]}

Balaji, M. ^{[1
]}

Lekha, P. Chithra ^{[1
]}

Sanjeev, Ganesh ^{[4
]}

Subramanian, E. ^{[3
]}

Padiyan, D. Pathinettam ^{[1
]}

机构：

[1] Manonmaniam Sundaranar Univ, Dept Phys, Tirunelveli 627012, Tamil Nadu, India

[2] MDT Hindu Coll, Tirunelveli 627010, India

[3] Manonmaniam Sundaranar Univ, Dept Chem, Tirunelveli 627012, Tamil Nadu, India

[4] Mangalore Univ, Microtron Ctr, Mangalore 574199, India

来源：

RADIATION PHYSICS AND CHEMISTRY | 2010年 / 79卷 / 11期

关键词：

Thin film; Electrodeposition; Irradiation; X-ray diffraction; Scanning electron microscopy (SEM); SWIFT HEAVY-IONS; IRRADIATION; TEMPERATURE; DEPOSITION;

D O I：

10.1016/j.radphyschem.2010.06.002

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of Bi2S3 prepared by electrodeposition method are subjected to electron beam irradiation for different doses from 0 to 100 kGy in steps of 20 kGy in air at room temperature. The changes in structural, surface morphological and optical properties that occurred before and after irradiation in Bi2S3 thin films are studied using X-ray diffraction, scanning electron microscopy and UV-vis spectroscopy. It is shown that electron irradiation can be used as a tool to decrease the crystallite size of the irradiated films from 418 to 285 angstrom as the dose varies from 20 to 100 kGy. The decrease in crystallinity of the films leading to the band gap energy of the films get blue shifted from unirradiated films. These results are explained in the light of thermal spike model. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1127 / 1131

页数：5

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