Growth of (InSb)1-x(Sn2)x Films on GaAs Substrates by Liquid-Phase Epitaxy

The possibility of growing single-crystal substitutional (InSb)(1 - x)(Sn-2)(x) alloy (0 = x = 0.05) on the GaAs substrate by liquid-phase epitaxy from the In solution melt is established. The X-ray diffraction patterns and spectral and current-voltage characteristics of obtained n-GaAs-p-(InSb)(1 - x)(Sn-2)(x) heterostructures are studied at different temperatures. The lattice parameters of the (InSb)(1 - x)(Sn-2)(x) alloy are determined. It is found that the forward portion of the current-voltage characteristic of such structures at low voltages (up to 0.7 V) is described by the exponential dependence I = I(0)exp(qV/ckT), and at high voltages (V > 0.9 V), there is a portion of sublinear increase in the current with the voltage V approximate to V(0)exp(Jad). The experimental results are interpreted based on the injection depletion theory. It is shown that the product of mobility of majority carriers by the concentration of deep-level impurities increases as the temperature increases.