Direct determination of electron capture in QWIPs

被引:0
|
作者
Maimon, S [1 ]
Finkman, E [1 ]
Schacham, SE [1 ]
Ritter, D [1 ]
Bahir, G [1 ]
机构
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
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暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We present a method for measuring the capture probability, p(c), of excited electrons into quantum wells. Using this method p(c) is determined directly as a function of electron energy above the well. The base and emitter currents are measured in an HBT-like structure with the quantum well as a bass. The capture probability, given by the ratio between these currents, is determined as a function of junction bias. The capture mechanisms are probably due to electron - hole and electron - hole-plasmon interactions in the p' type well. The probability remains high even for "hot" electrons, being about 50% for electrons injected with energy as large as 500 meV above the well.
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页码:110 / 115
页数:6
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