Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1-xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of CdxZn1-xZnSe/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced. (C) 2004 Elsevier B.V. All rights reserved.