Direct bonding of materials to be used in low-temperature electronics

被引：0
|
作者：
Kastner, G
Kopperschmidt, P
Hesse, D
Lorenz, M
Gosele, U
机构：
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[2] Univ Leipzig, Inst Expt Phys 2, D-7010 Leipzig, Germany
来源：
APPLIED SUPERCONDUCTIVITY 1997, VOLS 1 AND 2: VOL 1: SMALL SCALE AND ELECTRONIC APPLICATIONS; VOL 2: LARGE SCALE AND POWER APPLICATIONS | 1997年 / 158期
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Direct bonding between flat and clean surfaces of two arbitrary solids allows to fabricate novel materials combinations with well defined interfaces. Direct wafer bonding (DWB) has become a versatile approach in semiconductor technology for manufacturing power devices, sensors, and actuators. The present work is aimed to extend this approach to superconductor technologies. It comprises bonding of substrates and films suitable for HTSC, for dielectric resonators, and for hybrid HTSC/semiconductor applications.
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页码：173 / 176
页数：4
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