Diffusion kinetics and elemental transport in selective surface nitriding of CoCrFeNiTi0.5 high entropy powder

被引:4
|
作者
Haq, Muhammad Aneeq [1 ,2 ]
Song, Yoseb [2 ]
Ali, Ammad [1 ,2 ]
Hussain, Javid [1 ,2 ]
Sun, On Ji [2 ]
Jeong, Da-Woon [3 ]
Kim, Jeong Gon [4 ]
Kim, Bum Sung [1 ,2 ]
机构
[1] Univ Sci & Technol, Ind Mat & Smart Mfg Engn, Daejeon 34113, South Korea
[2] Korea Inst Ind Technol, Korea Inst Rare Met, Incheon 21999, South Korea
[3] Korea Inst Ind Technol, Korea Russia Innovat Ctr, Incheon 22004, South Korea
[4] Incheon Natl Univ, Adv Mat Sci & Engn, Incheon 22012, South Korea
关键词
High entropy matrix composite; Core-Shell; Diffusion kinetics; Interface; Phase transformation; MECHANICAL-PROPERTIES; MICROSTRUCTURE; ALLOYS; COMPOSITES; PLASMA; GROWTH;
D O I
10.1016/j.jallcom.2022.164174
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ceramic coated metal powders have recently found prominence owing to their prospective application in 3D microstructured metal matrix composite synthesis. To ensure a perfect matrix-reinforcement interface in these composites, the coating process needs to be in situ. To that end, we recently developed a process for in situ nitride surface coating of CoCrFeNi high entropy alloy (HEA) powder. This approach offers various advantages over other processes including ease of controlling the surface morphology and compositional control by adjusting the nitriding parameters. In this study, we aimed to elaborate the nitride layer formation mechanism, growth kinetics, and compositional control. Mechanically alloyed CoCrFeNiTi0.5 HEA powder was used as the starting powder. The nitride layer growth on the powder was observed at different temperatures of 973, 1073 and 1173 K for 1-12 h under partial nitrogen atmosphere. The nitrogen preferentially reacted with Ti to form a continuous layer of TiN on the powder surface. Further growth was found to be diffusion-controlled by the growth rate increase with increasing nitriding temperature. Morphological investigation revealed a strong efflux of Ti through the TiN grain boundaries resulting in a scale growth at the TiN/gas interface. This growth mechanism was validated by a high TiN layer growth activation of 240 kJ.mol-1. Finally it was revealed that the Cr dissolution within the TiN layer can be achieved at higher temperature. However, to retain the integrity of the surface layer, the Cr dissolution process needs better control (c) 2022 Published by Elsevier B.V.
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页数:8
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