A comparative study of SiCN/si and SiCN/SiCN junctions for high-temperature ultraviolet detecting applications

被引：3
|
作者：
Chou, Tse-Heng
Fang, Yean-Kuen [1 ]
Yang, Che-Yun
Chiang, Yen-Ting
Shie, Jin-Shu
Chien, Chia-Chen
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, VLSI Technol Lab, Tainan 70101, Taiwan
[2] Wefeng Inst Technol, Dept Elect Engn, Chiayi 621, Taiwan
[3] Meilin Elementary Sch, Chiayi 623, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 09期
关键词：
D O I：
10.1149/1.2754388
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report the comparative study of both n-SiCN/i-SiCN/p-SiCN and n-SiCN/i-SiCN/p-Si junctions for low-cost and high-temperature UV-detecting applications. The cubic crystalline SiCN films were deposited on p-Si(100) substrate with rapid thermal chemical vapor deposition. At 175 degrees C, the measured current ratio of n-SiCN/i-SiCN/p-SiCN and the n-SiCN/i-SiCN/p-Si junctions with and without irradiation of 254 nm UV light under -5 V and 0.5 mW/cm(2) are 150.26 and 5.42, respectively. Compared to the reported UV detectors with 4H or beta-SiC, the developed n-SiCN/i-SiCN/p-SiCN homojunction has better current ratio in both room and high temperatures. (c) 2007 The Electrochemical Society.
引用
收藏
页码：J105 / J107
页数：3
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