Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs

被引：85
|
作者：
Abd El Hamid, Hamdy [1 ]
Guitart, Jaume Roig
Iniguez, Benjamin
机构：
[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain
[2] CNRS, Lab Anal & Architecture Syst, F-31077 Toulouse 4, France
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 06期
关键词：
device modeling; double gate (DG); downscaling; drain induced barrier lowering (DIBL); MOSFET; subthreshold swing; threshold voltage;
D O I：
10.1109/TED.2007.895856
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed analytical physically based models for the threshold voltage [including the drain-induced barrier lowering (DIBL) effect] and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs. The models are derived from an analytical solution of the 2-D Poisson equation in which the electron concentration was included. The models for DIBL, subthreshold swing, and threshold voltage roll-off have been verified by comparison With 2-D numerical simulations for different values of channel length, channel thickness, and drain-source voltage; very good agreement with the numerical simulations has been observed.
引用
收藏
页码：1402 / 1408
页数：7
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