Possible Kondo insulating behaviour in U2Ru2Sn

被引：19
|
作者：
Menon, L [1 ]
du Plessis, PD [1 ]
Strydom, AM [1 ]
机构：
[1] Univ Witwatersrand, Dept Phys, ZA-2050 Johannesburg, South Africa
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 08期
关键词：
Kondo effects; valence fluctuations; electronic transport;
D O I：
10.1016/S0038-1098(98)00071-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The compound U2Ru2Sn is known to crystallize in the tetragonal U3Si2-type structure and is believed to be a weak paramagnet. We report electrical resistivity studies on this compound which seem to indicate semiconducting behaviour at low temperatures and hence a gap formation in this compound. This is evidenced from a sharp rise in the resistivity seen at low temperatures similar to that observed in the so-called Kondo insulators. (C) 1998 Elsevier Science Ltd. All rights reserved.
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收藏
页码：519 / 521
页数：3
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