Investigation on LG=50 nm Tapered T-Gated AlGaN/GaN HEMT on Silicon Wafer with a fT/fmax of 264/312 GHz for beyond 5G (B5G) Applications

The impact of mini-field plated tapered T-Gate and conventional gate on L-G = 50 nm AlGaN/GaN on - Silicon High Electron Mobility Transistor (HEMT) is analyzed and its DC/RF performance is reported in this work. The AlGaN/GaN HEMT supported with mini-filed plated tapered T- gate structure provides a maximum drain current of 1.53 A/mm when compared to conventional gate structure HEMT which is 0.8 A/mm. This work also examines, a brief analysis of mini-filed plated tapered T-gate structured HEMT for different work functions and different temperatures. The novel mini-filed plated tapered T-Gate structured HEMT on Silicon offers a higher cutoff frequency f(T) of 264 GHz and maximum oscillation frequency f(MAX) of 312 GHz which provides a great potential for future beyond 5G (B5G) applications.