Simultaneous surface topography and spin-injection probability

被引:0
|
作者
Bullock, DW [1 ]
LaBella, VP [1 ]
Ding, Z [1 ]
Thibado, PM [1 ]
机构
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
来源
关键词
D O I
10.1116/1.1532022
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A spin-polarized electron current is injected into a p-type GaAs(110) surface at 100 K using a polycrystalline ferromagnetic Ni scanning tunneling microscope tip. The injected electrons recombine to the valence band and emit circularly polarized light, and the degree of the light polarization is related to the degree of the electron polarization at the instant of recombination. Details of how to simultaneously measure the surface topography and obtain a pixel-by-pixel map of the spin-injection probability are discussed. The degree of light polarization is found to change when the electrons are injected into a clean, flat terrace versus over a step. However,the terrace-to-step polarization differences are systematically reduced as the energy of the electron is reduced. (C) 2003 American Vacuum Society.
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页码:67 / 70
页数:4
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