Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates

被引：0
|
作者：
Lee, HN [1 ]
Senz, S [1 ]
Visinoiu, A [1 ]
Pignolet, A [1 ]
Hesse, D [1 ]
Gösele, U [1 ]
机构：
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 71卷 / 01期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well defined orientation relations, viz. SBT(116)\\ SrRuO3(110)\\ YSZ(100)\\ Si(100), SBT[110]\\ SrRuO3[001], and SrRuO3[111]\\ YSZ[110]\\ Si[110]. PACS: 77.84.-s; 68.55.-a; 81.15.Fg.
引用
收藏
页码：101 / 104
页数：4
相关论文
共 50 条
  • [1] Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates
    Lee, H.N.
    Senz, S.
    Visinoiu, A.
    Pignolet, A.
    Hesse, D.
    Gösele, U.
    [J]. Applied Physics A: Materials Science and Processing, 2000, 71 (01): : 101 - 104
  • [2] Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates
    H.N. Lee
    S. Senz
    A. Visinoiu
    A. Pignolet
    D. Hesse
    U. Gösele
    [J]. Applied Physics A, 2000, 71 (1) : 101 - 104
  • [3] Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi2Ta2O9 films on buffered Si(100)
    Lee, HN
    Senz, S
    Zakharov, ND
    Harnagea, C
    Pignolet, A
    Hesse, D
    Gösele, U
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3260 - 3262
  • [4] Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on SrTiO3 substrates
    Lee, HN
    Senz, S
    Pignolet, A
    Hesse, D
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) : 1565 - 1568
  • [5] Epitaxial growth of (103)-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100)
    Lee, HN
    Senz, S
    Pignolet, A
    Hesse, D
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (19) : 2922 - 2924
  • [6] Oriented growth of SrBi2Ta2O9 ferroelectric thin films
    Desu, SB
    Vijay, DP
    Zhang, X
    He, BP
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1719 - 1721
  • [7] Epitaxial growth of (001)-oriented and (110)-oriented SrBi2Ta2O9 thin films
    Lettieri, J
    Jia, Y
    Urbanik, M
    Weber, CI
    Maria, JP
    Schlom, DG
    Li, H
    Ramesh, R
    Uecker, R
    Reiche, P
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (20) : 2923 - 2925
  • [8] Ferroelectric Properties of (001)- and (106)-Oriented SrBi2Ta2O9 Epitaxial Thin Films
    Tsutomu Nagahama
    Toshio Tsuchiya
    Kenichi Tsukada
    Takaaki Manabe
    Iwao Yamaguchi
    Toshiya Kumagai
    Susumu Mizuta
    [J]. Journal of Sol-Gel Science and Technology, 2000, 19 : 549 - 552
  • [9] Ferroelectric properties of (001)- and (106)-oriented SrBi2Ta2O9 epitaxial thin films
    Nagahama, T
    Tsuchiya, T
    Tsukada, K
    Manabe, T
    Yamaguchi, I
    Kumagai, T
    Mizuta, S
    [J]. JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2000, 19 (1-3) : 549 - 552
  • [10] Growth and characterization of non-c-axis-oriented SrBi2Ta2O9 epitaxial thin films on Si(100) substrates with SrRuO3 bottom electrodes
    Lee, HN
    Zakharov, D
    Senz, S
    Pignolet, A
    Hesse, D
    [J]. INTEGRATED FERROELECTRICS, 2001, 39 (1-4) : 1023 - 1030
12345