Photo-excited carrier relaxation dynamics in InN films

被引:1
|
作者
Hashimoto, Masafumi [1 ]
Fukunaga, Kazuya [1 ]
Kouyama, Kazuaki [1 ]
Kamimura, Jumpei [1 ]
Kunugita, Hideyuki [1 ]
Ema, Kazuhiro [1 ]
Kikuchi, Akihiko [1 ]
Kishino, Katsumi [1 ]
机构
[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan
关键词
D O I
10.1088/1742-6596/193/1/012053
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photo-excited carrier relaxation dynamics in InN films were investigated using femtosecond transient measurements. We measured two samples with different background carrier densities, and discussed the influence of the carrier densities on the relaxation dynamics. We also found that the slow decay component disappears under the optimized condition because of the effects of equilibrium band filling and bandgap renormalization.
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页数:4
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