Synthesis and Ex Situ Doping of ZnTe and ZnSe Nanostructures with Extreme Aspect Ratios

被引：14
|
作者：
Yim, Joanne W. L. [1 ,2 ]
Chen, Deirdre [1 ]
Brown, Gregory F. [1 ,2 ]
Wu, Junqiao [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源：
NANO RESEARCH | 2009年 / 2卷 / 12期
基金：
美国国家科学基金会;
关键词：
Aspect ratio; doping; nanowires; zinc selenide; zinc telluride; II-VI SEMICONDUCTORS; SILICON NANOWIRES; THIN-FILMS; GROWTH; COPPER; CRYSTALS; LIGHT;
D O I：
10.1007/s12274-009-9095-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.
引用
收藏
页码：931 / 937
页数：7
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