Optical characterization of silica based waveguide prepared by plasma enhanced chemical vapor deposition

被引：0
|
作者：
Cho, SM [1 ]
Kim, YT
Yoon, DH
Kim, JM
Yoon, HD
Im, YM
Jang, GE
机构：
[1] Sungkyunkwan Univ, Dept Adv Mat Engn, Suwon 440746, South Korea
[2] Korea elect Technol Inst, Opt Telecommun Res Ctr, Pyungtaek 451865, South Korea
[3] Chungbuk Univ, Dept Mat Sci & Mat Engn, Cheongju 361763, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
关键词：
PECVD; optical waveguide; silicon dioxide; silicon oxynitirde;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Silicon dioxide (SiO2) and silicon oxynitride (SiON) thick films used for cladding and core layer of silica based waveguides were fabricated by plasma enhanced chemical vapor deposition (PECVD) method, at a low temperature (320 degreesC) and from (SiH4+N2O+N-2) gas mixtures. The effects of deposition parameters on properties of SiO2 and SiON thick films were investigated by variations of SiH4, N-2, N2O flow ratio and RF power. The obtained SiO2 films had a high thickness and refractive index of 1.460 +/- 0.001 with the annealing process. FTIR and XPS revealed that deposited films were nearly stoichiometric composition with no presence of hydrogen content. SiON films had a 0.75 % higher refractive index than the cladding layer and a high thickness(> 5 mum).
引用
收藏
页码：S947 / S951
页数：5
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