Single crystal growth and properties of MgB2 and Mg(B1-x Cx)2

被引：15
|
作者：
Kazakov, SM [1 ]
Karpinski, J
Jun, J
Geiser, P
Zhigadlo, ND
Puzniak, R
Mironov, AV
机构：
[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2004年 / 408卷
关键词：
single crystals; Mg(B1-x; C-x)(2); high pressure; carbon doping; micro-hardness;
D O I：
10.1016/j.physc.2004.02.061
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Single crystals of MgB2 and Mg(B1-xCx)(2) have been grown using cubic anvil technique. T-c values vary in a wide range (39-9 K) with carbon content varying from 0% up to 16%. Using SiC as the precursor leads to C and not to Si Substituted crystals. Micro-hardness measurements performed on MgB2 single crystals give average value of 1100 kg/mm(2). (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：123 / 124
页数：2
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