High channel density dual operation mode MOS-controlled thyristor with superior current saturation capability

被引：2
|
作者：
You, BD [1 ]
Temple, VAK
Huang, AQ
Holroyd, F
机构：
[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
[2] Silicon Power Corp, Latham, NY 12110 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 09期
关键词：
current saturation; MCT; power device;
D O I：
10.1109/55.863113
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
1200-V dual operation mode MCT with low on-state voltage drop, high turn-off current and superior current saturation capability has been developed. The dual operation mode MCT overcomes the tradeoff between the on-state voltage drop and the current saturation capability of the conventional IGBT operation by working in a thyristor mode in the on state and in an IGBT mode during the switching transient. This Letter reports the device development and demonstrates how the dual operation mode MCT can be beneficial in switching circuit applications.
引用
收藏
页码：463 / 465
页数：3
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