Nano-photoluminescence studies of self-assembled quantum dots

被引：0

作者：

Htoon, H ^{[1
]}

Yu, HB ^{[1
]}

Kulik, D ^{[1
]}

Keto, JW ^{[1
]}

Baklenov, O ^{[1
]}

Holmes, AL ^{[1
]}

Shih, CK ^{[1
]}

机构：

[1] Univ Texas, Dept Phys, Austin, TX 78712 USA

来源：

SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR ALLOYS | 2000年 / 583卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two simple and effective far-field-optics-based methods capable of isolating photoluminescence peaks of different individual self assembled quantum dots (SAQD's) with nanometer scale precision are presented. By using these methods, we performed the temperature and electric field dependent studies on the optical properties of SAQD's. We found temperature induced inter-dot carrier transfer among neighboring quantum dots (QD's) and observed the quantum confined stark effect (QCSE).

引用

页码：105 / 110

页数：6

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