The in-depth description of phonon transport mechanisms for XC (X = Si, Ge) under hydrostatic pressure: Considering pressure-induced phase transitions

被引:4
|
作者
Li, Wenhe [1 ]
Gao, Yufei [1 ]
Zhang, Xiaoliang [1 ]
Li, Lin [1 ]
Tang, Dawei [1 ]
机构
[1] Dalian Univ Technol, Sch Energy & Power Engn, Key Lab Ocean Energy Utilizat & Energy Conservat, Minist Educ, Dalian, Peoples R China
关键词
XC; Thermal conductivity; Phonon characteristic; Hydrostatic pressure; Phase transitions; LATTICE THERMAL-CONDUCTIVITY; AMORPHOUS-GERMANIUM CARBIDE; MOLECULAR-DYNAMICS; 1ST-PRINCIPLES; RESISTANCE; SCATTERING;
D O I
10.1016/j.ijheatmasstransfer.2022.122851
中图分类号
O414.1 [热力学];
学科分类号
摘要
A B S T R A C T In this paper, the effect of hydrostatic pressure on the thermal transport properties of silicon carbide (SiC) and germanium carbide (GeC) with zinc blende (ZB) and rock salt (RS) phases at room temperature is investigated by solving the phonon Boltzmann heat transport equation. Studies show that the thermal conductivities of the two materials increase with the raising pressure before the phase transition, however, the enhancement of GeC (40%) is much smaller than that of SiC (10 0%). Combined with phonon analysis, it is found that this phenomenon originates from the abnormal enhanced phonon scattering rate under high pressure, which partly offsets the increase of phonon group velocity and further suppresses the increase of thermal conductivity. Next, when the phase transition occurs, the thermal conductivities of SiC and GeC decrease sharply by 76% and 86%, respectively, which is mainly caused by the increase of the anharmonic characteristic related to phonon scattering. Finally, after the phase transition, the thermal conductivities of the two materials still show increasing trends with the raising pressure, however, the phonon group velocity of GeC does not change significantly and the variation of its thermal conductivity is mainly determined by the phonon lifetime, which is opposite to the case before phase transition, whose enhancement of thermal conductivity is mainly caused by the increase of phonon group velocity. The results indicate that GeC has a more complex phonon transport mechanism compared with SiC, i.e., its thermal conductivity before phase transition is determined by harmonic characteristic and that after phase transition shows a closer relationship with the anharmonic characteristic. This study provides data and mechanism support for the regulation of thermal conductivity from the perspective of pressure induced phase transition, and as well as supplies some guiding suggestions for engineering applications in the field of thermal transport regulation. (c) 2022 Elsevier Ltd. All rights reserved.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Hydrostatic Pressure Tuning of Thermal Conductivity for PbTe and PbSe Considering Pressure-Induced Phase Transitions
    Zhang, Min
    Tang, Guihua
    Li, Yifei
    [J]. ACS OMEGA, 2021, 6 (05): : 3980 - 3990
  • [2] Pressure induced structural phase transition of XC (X = Si, Ge, Sn)
    Kaurav, N.
    Verma, S.
    Choudhary, K. K.
    Sharma, U.
    Shah, S.
    [J]. INTERNATIONAL CONFERENCE ON RECENT TRENDS IN PHYSICS (ICRTP 2012), 2012, 365
  • [3] Theory of the mechanisms of pressure-induced phase transitions in oxygen
    Katzke, Hannelore
    Toledano, Pierre
    [J]. PHYSICAL REVIEW B, 2009, 79 (14):
  • [4] Mechanisms for Pressure-Induced Isostructural Phase Transitions in EuO
    Desmarais, Jacques K.
    Erba, Alessandro
    Pan, Yuanming
    Civalleri, Bartolomeo
    Tse, John S.
    [J]. PHYSICAL REVIEW LETTERS, 2021, 126 (19)
  • [5] THE STRUCTURAL DISORDER MODEL - PRESSURE-INDUCED TRANSITIONS IN THE SEMICONDUCTORS SI AND GE
    DIXIT, PK
    VAID, BA
    SHARMA, KC
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 133 (01): : 71 - 74
  • [6] PRESSURE-INDUCED SEMICONDUCTOR-METAL TRANSITIONS IN AMORPHOUS SI AND GE
    SHIMOMURA, O
    MINOMURA, S
    SAKAI, N
    ASAUMI, K
    TAMURA, K
    FUKUSHIMA, J
    ENDO, H
    [J]. PHILOSOPHICAL MAGAZINE, 1974, 29 (03) : 547 - 558
  • [7] Pressure-induced phase transitions of ZnSe under different pressure environments
    Pu, Chang
    Dai, Lidong
    Li, Heping
    Hu, Haiying
    Liu, Kaixiang
    Yang, Linfei
    Hong, Meiling
    [J]. AIP ADVANCES, 2019, 9 (02)
  • [8] Pressure-induced phase transitions in the ZrXY (X = Si, Ge, Sn; Y = S, Se, Te) family compounds
    Chen, Qun
    Wu, Juefei
    Chen, Tong
    Wang, Xiaomeng
    Ding, Chi
    Huang, Tianheng
    Lu, Qing
    Sun, Jian
    [J]. CHINESE PHYSICS B, 2022, 31 (05)
  • [9] Pressure-induced phase transitions in the ZrXY(X = Si, Ge, Sn;Y = S, Se, Te) family compounds
    陈群
    吴珏霏
    陈统
    王晓梦
    丁弛
    黄天衡
    鲁清
    孙建
    [J]. Chinese Physics B, 2022, (05) : 636 - 643
  • [10] PHASE-TRANSITIONS IN SI, GE AND SN UNDER PRESSURE
    OLIJNYK, H
    HOLZAPFEL, WB
    [J]. JOURNAL DE PHYSIQUE, 1984, 45 (NC8): : 153 - 156