MgB2 thick films grown on metal substrates using the electrophoresis technique

被引:3
|
作者
Wang, SF [1 ]
Zhu, YB [1 ]
Zhang, Q [1 ]
Liu, Z [1 ]
Zhou, YL [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China
关键词
MgB2 thick films; electrophoresis; metal substrates;
D O I
10.7498/aps.52.1505
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
MgB2 thick films were grown on metal substrates Ta, Mo and W using the electrophoresis technique. The scanning electron microscopy and x-ray diffraction show that the grains in the MgB2 thick films are in random orientation with their size below 1mum. The onset temperatures of superconducting transition of MgB2/Ta,MgB2/Mo,MgB2/W are observed at 36.5, 34.8 and 33.4K, with the transition widths of 0.3, 1.5 and 2.0K, respectively. The critical current density of the MgB2/Mo thick film at 5 K and 1T is more than 10(5) A/cm(2). This new method provides a great potential for MgB2 in practical applications.
引用
收藏
页码:1505 / 1508
页数:4
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