Impact of high energy radiation effects on N-channel MOSFETs

The effect of 30 MeV Li3+, ion and 8 MeV electron irradiations on the threshold voltage (V7(TH)), the voltage shift due to interface trapped charge (DeltaV(Nit)) the voltage shift due to oxide trapped charge (DeltaV(Not)), the density of interface trapped charge (DeltaN(it)), the density of oxide trapped charge (DeltaN(ot)) and the drain saturation current (I-D Sat) were studied as a function of fluence. The considerable increase in the DeltaN(it) and DeltaN(ot), and decrease in V-TH and I-D S-at were observed in both types of irradiations. The observed difference in the properties of Li3+ ion and electron-irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value.