Growth, structure and electrical properties of mercury indium telluride single crystals

A new zinc-blende type photoelectronic single crystal, Hg(3-3x)In2x Te-3(MIT), was grown by using the vertical Bridgman method. The structure of the MIT (x = 0.5) crystal was examined by x-ray powder diffraction. The lattice parameters were determined to be 6.2934 +/- 0.0011 angstrom with a defect zinc-blende structure, which belongs to the group F (4) over bar 3m. The melting point of the MIT crystal was measured by using the differential scanning calorimetry. Hall effect measurements on electrical properties at room temperature show that resistivity, carrier density and mobility of MIT crystal were 4.79 x 10(2) Omega cm, 2.83 x 10(13) cm(-3) and 4.60 x 10(2) cm(2) V-1 s(-1), respectively. The electron effective mass at the bottom of the conduction band and the top of the valence band was calculated. It was found that the Fermi level of the MIT crystal was about 0.008 eV higher than that of the mid-gap. The experimental carrier concentration was in good accordance with the theoretical result.