Hydrogen density-of-states in polycrystalline silicon

The influence of laser crystallization on hydrogen bonding in polycrystalline silicon is investigated employing hydrogen effusion measurements. Fully crystallized poly-Si samples contain a residual H concentration of up to 1.5x10(22) cm(-3). From the effusion spectra, the H density-of-states distribution is derived. Interestingly, hydrogen bonding is affected by the deposition temperature of the amorphous starting material. Below the H transport states, four peaks are observed in the H density of states at approximate to-2.15, -2.4, -2.7, and -3.25 eV. (C) 2003 American Institute of Physics.