Effect of device density on the uniformity of silicon nano-photonic waveguide devices

被引：6

作者：

Selvaraja, Shankar Kumar

De Vos, Katrien

Bogaerts, Wim

Bienstman, Peter

Van Thourhout, Dries

Baets, Roel

机构：

来源：

2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年

关键词：

Silicon-on-Insulator; 193nm optical lithography; CMOS photonics;

D O I：

10.1109/LEOS.2009.5343250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report wavelength selective device nonuniformity of 1 nm over a 200 mm SOI wafer using CMOS fabrication technology. We also report correlation between device density and nonuniformity.

引用

页码：311 / 312

页数：2

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